Method of manufacturing semiconductor device

Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thic...

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Bibliographische Detailangaben
Hauptverfasser: SUMITOMO, KAORI, HORIBE, HIROSHI, ARAKAWA, HIDEYUKI, TAKATA, YASUKI
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (α portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.