Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same

Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same

The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for...

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Hauptverfasser: SEO, SEONGMOH, CHO, KISUL
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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CHO, KISUL
description The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TWI489635BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TWI489635BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TWI489635BB3</originalsourceid><addsrcrecordid>eNqNi0EKwjAQRbNxIeod5gKuqqLbiqL7gssyJhMTaCalMxGPbwMewNXn8d9bGupCZPBxSKATskTRPIGUp8yoBAHfkV-QSHGA_ImOQChFm9kVW1VkV9-QHfgZE3LxaLVMNdMw65hobRYeB6HNb1cGrpfufNvSmHuSES0xad897rvj6dDs27b5Q_kCH5pACw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same</title><source>esp@cenet</source><creator>SEO, SEONGMOH ; CHO, KISUL</creator><creatorcontrib>SEO, SEONGMOH ; CHO, KISUL</creatorcontrib><description>The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150621&amp;DB=EPODOC&amp;CC=TW&amp;NR=I489635B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150621&amp;DB=EPODOC&amp;CC=TW&amp;NR=I489635B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEO, SEONGMOH</creatorcontrib><creatorcontrib>CHO, KISUL</creatorcontrib><title>Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same</title><description>The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi0EKwjAQRbNxIeod5gKuqqLbiqL7gssyJhMTaCalMxGPbwMewNXn8d9bGupCZPBxSKATskTRPIGUp8yoBAHfkV-QSHGA_ImOQChFm9kVW1VkV9-QHfgZE3LxaLVMNdMw65hobRYeB6HNb1cGrpfufNvSmHuSES0xad897rvj6dDs27b5Q_kCH5pACw</recordid><startdate>20150621</startdate><enddate>20150621</enddate><creator>SEO, SEONGMOH</creator><creator>CHO, KISUL</creator><scope>EVB</scope></search><sort><creationdate>20150621</creationdate><title>Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same</title><author>SEO, SEONGMOH ; CHO, KISUL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TWI489635BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SEO, SEONGMOH</creatorcontrib><creatorcontrib>CHO, KISUL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEO, SEONGMOH</au><au>CHO, KISUL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same</title><date>2015-06-21</date><risdate>2015</risdate><abstract>The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T08%3A40%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SEO,%20SEONGMOH&rft.date=2015-06-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETWI489635BB%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true