Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same

The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for...

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Bibliographische Detailangaben
Hauptverfasser: SEO, SEONGMOH, CHO, KISUL
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.