Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same
The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized. |
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