An ion implantation system, an electric deflection apparatus for use in a beam line within the same and a method of implanting ions

A deflection component suitable for use in an ion implantation system comprises multiple electrodes that can be selectively biased to cause an ion beam passing therethrough to bend, deflect, focus, converge, diverge, accelerate, decelerate, and/or decontaminate. Since the electrodes can be selectively biased, and thus one or more of them can remain unbiased or off, the effective length of the beam path can be selectively adjusted as desired (e.g., based upon beam properties, such as energy, dose, species, etc.).