Process for fabricating a multilayer structure with trimming using thermo-mechanical effects

The method involves clipping an edge of a plate (110) realized with a wheel (150) whose working surface (151) includes abrasive particles before thinning the plate, where average size of the abrasive particles is greater or equal to 800 mesh or lower or equal to 18 microns. The clipping of the edge...

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Bibliographische Detailangaben
Hauptverfasser:	VAUFREDAZ, ALEXANDRE, MOLINARI, SEBASTIEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The method involves clipping an edge of a plate (110) realized with a wheel (150) whose working surface (151) includes abrasive particles before thinning the plate, where average size of the abrasive particles is greater or equal to 800 mesh or lower or equal to 18 microns. The clipping of the edge is realized with lowering speed of the wheel, where the lowering speed of the wheel is greater than or equal to 5 micrometer per second. A descent of the wheel in the plate is stopped at height of a gluing interface, where the descent is lower than or equal to 30 micrometer. The plate is chosen from a silicon plate or sapphire plate or semiconductor on an insulator structure.