Methods for rinsing microelectronic substrates utilizing cool rinse fluid within a gas environment including a drying enhancement substance

Rinsing and drying a surface of a microelectronic device and the enhanced removal of rinse fluid from the surface of the microelectronic device while the microelectronic device is rotated is provided as part of a spray processing operation. Rinse fluid is generally directed to the surface of the microelectronic device by a dispensing device while one or more such microelectronic devices are supported on a turntable in a generally horizontal fashion. Drying gas is supplied after the rinsing step. During at least a portion of both rinsing and drying steps, a drying enhancement substance, such as IPA, is delivered to enhance the rinsing and drying. Particle counts and evaporation thicknesses are reduced by delivering a tensioactive compound like IPA, during at least portions of the rinsing and drying steps while a microelectronic device is controllably rotated. The tensioactive compound is preferably delivered into the processing chamber during rinsing and drying and rinse fluid, preferably DI water, is preferab