Memory cell system using silicon-rich nitride

Memory cell system using silicon-rich nitride

A memory cell system including providing a substrate, forming a charge-storing stack having silicon-rich nitride on the substrate, and forming a gate on the charge-storing stack.

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Bibliographische Detailangaben
Hauptverfasser: DING, MENG, XUE, LEI, CHANG, CHI, BERTRAM OGLE, JR. ROBERT, RANDOLPH, MARK
Format: Patent
Sprache:chi ; eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A memory cell system including providing a substrate, forming a charge-storing stack having silicon-rich nitride on the substrate, and forming a gate on the charge-storing stack.