Silicon nitride film with stress control

Silicon nitride film with stress control

An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chambe...

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Bibliographische Detailangaben
Hauptverfasser: MELE, THOMAS, SMITH, JACOB W, THAKUR, RANDHIR P. SINGH, LAM, ANDREW M, IYER, R. SURYANARAYANAN, MAEDA, YUJI, SEUTTER, SEAN M, TANDON, SANJEEV, THIRUPAPULIYUR, SUNDERRAJ
Format: Patent
Sprache:chi ; eng
Schlagworte:
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
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Beschreibung
Zusammenfassung:An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.