Processing system and plasma generation device thereof

A processing system is used for processing an object by a first fluid. The processing system includes a base and a plasma generation device. The base supports the object and the plasma generation device ionizes the first fluid. The plasma generation device includes at least one guiding element comprising a path guiding the first fluid to sequentially flow through a first position and a second position and at least one electrode element including a first electrode corresponding to the first position and a second electrode corresponding to the second position. The first and second electrodes energize the first fluid located between the first and second electrodes to form a second fluid, to thereby utilize the second fluid to perform surfacing, activating, cleaning, photoresist ashing or etching process on the object supported by the base.