Method for preparing light emitting diode device having heat dissipation rate enhancement

Method for preparing light emitting diode device having heat dissipation rate enhancement

An LED device and a method for manufacturing the same are provided to easily separate substrates by using two adhesives with different viscosity each other. A light emitting diode part grown on a sapphire substrate is bonded with a first surface of a first substrate by using a first adhesive. A seco...

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Hauptverfasser: CHANG, SUK KY, YU, MIN A, KHO, DONG HAN, PARK, SOO MIN, SHIN, BU GON, KANG, JONG HOON, CHUN, SANG KI, LEE, JAE SEUNG, CHOI, MIN HO, HA, DUK SIK
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Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHANG, SUK KY
YU, MIN A
KHO, DONG HAN
PARK, SOO MIN
SHIN, BU GON
KANG, JONG HOON
CHUN, SANG KI
LEE, JAE SEUNG
CHOI, MIN HO
HA, DUK SIK
description An LED device and a method for manufacturing the same are provided to easily separate substrates by using two adhesives with different viscosity each other. A light emitting diode part grown on a sapphire substrate is bonded with a first surface of a first substrate by using a first adhesive. A second surface of the first substrate is bonded with a first surface of a second substrate by using a second adhesive having a relatively low viscosity compared to the first adhesive. The second surface of the sapphire substrate is processed, and the second substrate is discrete. The resultant structure is discrete into a unit chip. The processed second surface of the sapphire substrate is connected to a lead frame, and the first substrate is discrete.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for preparing light emitting diode device having heat dissipation rate enhancement
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