Method for preparing light emitting diode device having heat dissipation rate enhancement

An LED device and a method for manufacturing the same are provided to easily separate substrates by using two adhesives with different viscosity each other. A light emitting diode part grown on a sapphire substrate is bonded with a first surface of a first substrate by using a first adhesive. A seco...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHANG, SUK KY, YU, MIN A, KHO, DONG HAN, PARK, SOO MIN, SHIN, BU GON, KANG, JONG HOON, CHUN, SANG KI, LEE, JAE SEUNG, CHOI, MIN HO, HA, DUK SIK
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An LED device and a method for manufacturing the same are provided to easily separate substrates by using two adhesives with different viscosity each other. A light emitting diode part grown on a sapphire substrate is bonded with a first surface of a first substrate by using a first adhesive. A second surface of the first substrate is bonded with a first surface of a second substrate by using a second adhesive having a relatively low viscosity compared to the first adhesive. The second surface of the sapphire substrate is processed, and the second substrate is discrete. The resultant structure is discrete into a unit chip. The processed second surface of the sapphire substrate is connected to a lead frame, and the first substrate is discrete.