Slurry for mechanical polishing (cmp) of metals and use thereof

PURPOSE: Slurry compositions that are useful for polishing or planarizing a surface are provided, and polishing processes employing the compositions are provided. CONSTITUTION: The slurry composition comprises about 0.5 to about 6% by weight of the abrasive particles, about 1 to 50 g/l of the oxidiz...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LOFARO, MICHAEL FRANCIS, HANNAH, JAMES WILLARD, COTE, WILLIAM, TORNELLO, JAMES ANTHONY, DAVIS, KENNETH MORGAN, WHITE, ERIC JEFFREY, COBB, MICHAEL ADDITION, SCHAFFER, DEAN ALLEN, ESTES, SCOTT ALAN, KRISHNAN, MAHADEVAIYER, SLUSSER, GEORGE JAMES, CANAPERI, DONALD FRANCIS, BRIGHAM, MICHAEL TODD, GORDON, EDWARD JACK, MACDONALD, MICHAEL JOSEPH
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE: Slurry compositions that are useful for polishing or planarizing a surface are provided, and polishing processes employing the compositions are provided. CONSTITUTION: The slurry composition comprises about 0.5 to about 6% by weight of the abrasive particles, about 1 to 50 g/l of the oxidizer, about 0.1 to about 100 ml/l of the surface active agent, about 0.001 to about 20 g/l of the chloride ion source, and about 0.001 to about 20 g/l of the sulfate ion source. The method for polishing a surface comprises the steps of providing on the surface a slurry composition comprising abrasive particles, an oxidizer, a surface active agent, a chloride ion source and a sulfate ion source; and polishing the surface by contacting it with a polishing pad, wherein the surface is selected from the group consisting of copper, aluminum, tungsten, and their alloys.