System for reducing critical current of magnetic random access memory

System for reducing critical current of magnetic random access memory

A system and a method for reducing critical current of magnetic random access memory (MRAM) are disclosed. The magnetic device includes at least a pinned layer, a spacer layer and a free layer, and the material of the pinned layer and the free layer is perpendicularly anisotropic ferrimagnetic. The...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WU, TEHO, ALBERTO CANIZO CABRERA, YE, LINHSIU
Format: Patent
Sprache:chi ; eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A system and a method for reducing critical current of magnetic random access memory (MRAM) are disclosed. The magnetic device includes at least a pinned layer, a spacer layer and a free layer, and the material of the pinned layer and the free layer is perpendicularly anisotropic ferrimagnetic. The spacer layer is an insulator. By the modified Landau-Lifshitz-Gilbert equations, the varying trend of the critical current can be estimated.