TWI299929B

To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of crack...

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Bibliographische Detailangaben
Hauptverfasser:	HUAND, GEN SHENG, YAO, HSIN HUNG, KUO, HAO CHUNG, WANG, SHING CHUNG
Format:	Patent
Sprache:	chi
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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Beschreibung
Zusammenfassung:	To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.