Stack structure of mini-cap for protecting RF device

A stack structure is disclosed herein, and the stack structure is particularly suitable for forming a mini-cap for protecting a RF device. According to the present invention, the stack structure of the mini-cap comprises a plurality of layers as follows in order: a base layer, a protective layer, an...

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Bibliographische Detailangaben
Hauptverfasser:	CHENG, BOR-JEN, WANG, WEIUNG, SU, CHING-HUEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A stack structure is disclosed herein, and the stack structure is particularly suitable for forming a mini-cap for protecting a RF device. According to the present invention, the stack structure of the mini-cap comprises a plurality of layers as follows in order: a base layer, a protective layer, and a bonding media layer. The protective layer is not only used to support and protect the RF device, but also a nonmagnetic material to prevent the RF device from electromagnetic interference.