Manufacturing process for integrated circuit

The present invention provides a manufacturing process of a trench-MOSFET having the anti-ESD device. In the present invention, one polysilicon layer deposition and one polysilicon layer etching are used to form the gate of a trench device and the polysilicon layer of a planar device having the anti...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG, CHIEN-PING, TSENG, MAO-SONG, HSIEH, HSIN-HUANG, YUAN, TIEN-MIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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