Manufacturing process for integrated circuit

The present invention provides a manufacturing process of a trench-MOSFET having the anti-ESD device. In the present invention, one polysilicon layer deposition and one polysilicon layer etching are used to form the gate of a trench device and the polysilicon layer of a planar device having the anti...

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Bibliographische Detailangaben
Hauptverfasser:	CHANG, CHIEN-PING, TSENG, MAO-SONG, HSIEH, HSIN-HUANG, YUAN, TIEN-MIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a manufacturing process of a trench-MOSFET having the anti-ESD device. In the present invention, one polysilicon layer deposition and one polysilicon layer etching are used to form the gate of a trench device and the polysilicon layer of a planar device having the anti-ESD simultaneously. The present invention not only has overcome the problem of electric leakage, but also has the advantages of withstanding higher voltage, reducing the relevant cost and increasing the yields. The present invention possesses the outstanding technical features in the field of trench-type power device.