Thin channel MOSFET with source/drain stressors

Methods of manufacturing microelectronic device including, in one embodiment, forming a gate electrode over a substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layers, and removing at least a portion of the thin semiconductor and insulating layer,...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	LEE, WENIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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