Thin channel MOSFET with source/drain stressors

Methods of manufacturing microelectronic device including, in one embodiment, forming a gate electrode over a substrate having an insulating layer interposing a bulk semiconductor portion and a thin semiconductor layers, and removing at least a portion of the thin semiconductor and insulating layer, thereby defining a pedestal comprising a portion of the thin semiconductor and insulating layers. Source/drain stressors are then formed contacting the source/drain extensions on opposing sides of the pedestal and substantially spanning a height no less than the pedestal.