Methods of cleaning the shadow masks in the production of displays (variants) and device for their realization

The method of cleaning the shadow masks (variants) and the device for its realization proposed as an invention are intended for use in the field of the vacuum cleaning of the shadow masks from deposition of organic and inorganic materials in the production of the OLED (organic light emitting diode) displays with using the reactive ion-beam etching of the contaminated surface. In the first variant of the method according to the inventions, the cooled holder, in which the mask is disposed, is mounted in the vacuum chamber; the processed mask surface, which is directed towards the emitting surface of the ion source, is being scanned by the focused ribbon ion beam. The tangential speed of scanning is selected in such a way that the energy dose received by the element of the mask surface during a single ion-beam passage over this surface would not exceed the quantity of heat corresponding to the maximum allowable overheating and where oxygen or the mixture thereof is used as ion-forming gas. In the second variant of the method, the mask is pressed additionally to. The holder by means of a clamping mechanism for ensuring the heat contact between the cooled holder and the not treated mask surface. In both variants, oxygen is mixed with the gases from the following series: Ar, Xe, Kr, Ne, N2, CxHy, CxFy, and the oxygen part in the mixture exceeds 10%. In the second variant, the mask is pressed to the surface of the cooled holder by means of the magnetic field created by the magnetic field source. The device for realizing the method any of variants, which comprises the vacuum chamber and, at least, one ion source disposed therein and mask the treated surface of which is faced to the emitting surface of the ion source, is provided additionally, according to the invention, with a cooled holder disposed inside the vacuum chamber and clamping mechanism disposed above and/or inside the vacuum chamber intended for pressing the mask against the cooled holder and ensuring the heal; contact between the cooled holder and not treated mask surface, the ion source designed so that it can alter the coordinates of intersection of the ion beam with the treated mask surface.