A semiconductor light-emitting device
A semiconductor light-emitting device fabricated in a nitride material system has an active region 5 disposed over a substrate 1. The active region 5 comprises a first aluminium-containing layer 12 forming the lowermost layer of the active region, a second aluminium-containing layer 14 forming the u...
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| creator | JOHNSON, KATHERINE L BOUSQUET, VALERIE HEFFERNAN, JONATHAN HOOPER, STEWART |
| description | A semiconductor light-emitting device fabricated in a nitride material system has an active region 5 disposed over a substrate 1. The active region 5 comprises a first aluminium-containing layer 12 forming the lowermost layer of the active region, a second aluminium-containing layer 14 forming the uppermost layer of the active region, and at least one InGaN quantum well layer 13 disposed between the first aluminium-containing layer 12, and the second aluminium-containing layer 14. The aluminium-containing layers (12, 14) provide improved carrier confinement in the active region 5, and so increase the output optical power of the device. The invention may be applied to a light-emitting diode 11 or to a laser diode. |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | A semiconductor light-emitting device |
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