A semiconductor light-emitting device

A semiconductor light-emitting device fabricated in a nitride material system has an active region 5 disposed over a substrate 1. The active region 5 comprises a first aluminium-containing layer 12 forming the lowermost layer of the active region, a second aluminium-containing layer 14 forming the u...

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Bibliographische Detailangaben
Hauptverfasser:	JOHNSON, KATHERINE L, BOUSQUET, VALERIE, HEFFERNAN, JONATHAN, HOOPER, STEWART
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor light-emitting device fabricated in a nitride material system has an active region 5 disposed over a substrate 1. The active region 5 comprises a first aluminium-containing layer 12 forming the lowermost layer of the active region, a second aluminium-containing layer 14 forming the uppermost layer of the active region, and at least one InGaN quantum well layer 13 disposed between the first aluminium-containing layer 12, and the second aluminium-containing layer 14. The aluminium-containing layers (12, 14) provide improved carrier confinement in the active region 5, and so increase the output optical power of the device. The invention may be applied to a light-emitting diode 11 or to a laser diode.