Semiconductor device and manufacturing method for the same

A semiconductor device according to the present invention comprises an electrode pad (2) electrically conducted to an electric circuit formed on an element-formed surface of a silicon wafer (4); a wiring pattern (5) re-wired by being electrically conducted to the electrode pad (2); and an oxide film...

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Bibliographische Detailangaben
Hauptverfasser:	SUMINOE, SHINJI, IWAZAKI, YOSHIHIDE, MORI, KATSUNOBU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device according to the present invention comprises an electrode pad (2) electrically conducted to an electric circuit formed on an element-formed surface of a silicon wafer (4); a wiring pattern (5) re-wired by being electrically conducted to the electrode pad (2); and an oxide film (10) formed on a surface of the wiring pattern (5), the oxide film being formed by subjecting the wiring pattern (5) to oxidization. With the provision of oxide film (10), the semiconductor device prevents a decrease in reliability in terms of electric characteristic or the like, and also achieves reduction in fabrication cost compared to a conventional semiconductor device.