Method for the galvanic application of a metal, in particular of copper, use of this method and integrated circuit arrangement

Method for the galvanic application of a metal, in particular of copper, use of this method and integrated circuit arrangement

An explanation is given of, inter alia, a method in which a contact hole (18) to an interconnect (14) in an insulating layer (16) is fabricated. A barrier layer (20) is subsequently applied. Afterward, a photoresist layer (30) is applied, irradiated and developed. With the aid of a galvanic method,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LINDNER, CHRISTINE, BRADL, STEPHAN, KERKEL, KLAUS
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An explanation is given of, inter alia, a method in which a contact hole (18) to an interconnect (14) in an insulating layer (16) is fabricated. A barrier layer (20) is subsequently applied. Afterward, a photoresist layer (30) is applied, irradiated and developed. With the aid of a galvanic method, a copper contact (32) is then produced in the contact hole (18). Either the barrier layer (22) serves as a boundary electrode in the galvanic process. Critical metal contaminations are kept down by this method in production.