Electronic structures with reduced capacitance

Electronic structures with reduced capacitance

An apparatus and method is described incorporating one or more layers of SiCOH and one or more layers of patterned conductors in an integrated circuit chip. The invention overcomes the problem of capacitance by lowering the k of the delectric and overcomes the problem of breakdown voltage and the le...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GRILL, ALFRED, GATES, STEPHEN MCCONNELL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
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Beschreibung
Zusammenfassung:An apparatus and method is described incorporating one or more layers of SiCOH and one or more layers of patterned conductors in an integrated circuit chip. The invention overcomes the problem of capacitance by lowering the k of the delectric and overcomes the problem of breakdown voltage and the leakage current by tailoring the composition of SiCOH.