Manufacture of a semiconductor light-emitting device

A method of manufacturing a semiconductor light-emitting device comprises depositing an electrically conductive material (11a, 11b, 11c) on one or more selected portions of the surface of a semiconductor wafer comprising a substrate (2) and a layer structure (4) having at least a first semiconductor...

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Bibliographische Detailangaben
Hauptverfasser: KAUER, MATTHIAS, JOHNSON, KATHERINE L, HOOPER, STEWART E, BOUSQUET, VALERIE, HEFFERNAN, JONATHAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A method of manufacturing a semiconductor light-emitting device comprises depositing an electrically conductive material (11a, 11b, 11c) on one or more selected portions of the surface of a semiconductor wafer comprising a substrate (2) and a layer structure (4) having at least a first semiconductor layer (2) of a first conductivity type and a second semiconductor layer (3) of a second conductivity type different from the first conductivity type, the first layer (2) being between the second layer (3) and the substrate (1). The electrically conductive material forms a contact to the first semiconductor layer. The wafer is then diced to form a plurality of light-emitting devices (12), each light-emitting device having a respective part of the electrically conductive material.