Capping layer for EUV optical elements

Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4 and TiN and compounds and alloys thereof. The final pe...

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Bibliographische Detailangaben
Hauptverfasser:	SINGH, MANDEEP, VISSER, HUGO MATTHIEU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES GLASS HOLOGRAPHY IRRADIATION DEVICES JOINING GLASS TO GLASS OR OTHER MATERIALS MATERIALS THEREFOR METALLURGY MINERAL OR SLAG WOOL NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	Optical elements such as multilayered EUV mirrors are provided with protective capping layers of diamond-like carbon (C), boron nitride (BN), boron carbide (B4C), silicon nitride (Si3N4), silicon carbide (SiC), B, Pd, Ru, Rh, Au, MgF2, LiF, C2F4 and TiN and compounds and alloys thereof. The final period of a multilayer coating may also be modified to provide improved protective characteristics.