Method of making transistor with strained source/drain

A method of fabricating a transistor comprises the step of: forming a gate electrode above a substrate made of a first semiconductor material having a first lattice spacing, forming recesses in the semiconductor substrate at respective locations where a source region and a drain region are to be for...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN, YUN-HSIU, JANG, SYUN-MING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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