Method of making transistor with strained source/drain

A method of fabricating a transistor comprises the step of: forming a gate electrode above a substrate made of a first semiconductor material having a first lattice spacing, forming recesses in the semiconductor substrate at respective locations where a source region and a drain region are to be for...

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Bibliographische Detailangaben
Hauptverfasser: CHEN, YUN-HSIU, JANG, SYUN-MING
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of fabricating a transistor comprises the step of: forming a gate electrode above a substrate made of a first semiconductor material having a first lattice spacing, forming recesses in the semiconductor substrate at respective locations where a source region and a drain region are to be formed, epitaxially growing a second semiconductor material having a second lattice spacing different from the first lattice spacing in the recesses, and implanting a dopant in the second semiconductor material after the growing step.