Method for forming a blind hole in a substrate

Method for forming a blind hole in a substrate

A method for forming a blind hole in a substrate is disclosed. The substrate has a dielectric layer between an inner Cu layer and an outer Cu layer. Laser having wavelength 0.2 to 1.0 mum is utilized to laser-drill the substrate. The laser is moved in a rotation way to etch through dielectric layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIU, CHEN-HSUAN, KAO, FENG, WEN, SHAUUO, LO, KUANG-LIN, PAN, YUNG-TENG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for forming a blind hole in a substrate is disclosed. The substrate has a dielectric layer between an inner Cu layer and an outer Cu layer. Laser having wavelength 0.2 to 1.0 mum is utilized to laser-drill the substrate. The laser is moved in a rotation way to etch through dielectric layer and to form a cavity in the inner Cu layer, thereby a blind hole is formed. Accordingly, plating copper within the blind hole doesn't have issue of electrical open by thermal test.