ITO sputtering target and production method therefor

To provide an ITO (indium-tin-oxide) sputtering target having a structure which suppresses the frequency of arcing caused by intermediate compound phases, and to provide a production method therefor. The target uses an ITO sintered compact consisting of a base phase consisting of cubic system In2O3, and having relative density of >= 99%, and an intermediate compound phase of IN2O3 and SnO2. The ratio between the elliptic major axis and the minor axis in the intermediate compound particles in the SEM (scanning electron microscope) observation of the optional cross-section in the sintered compact is >= 2.1, or >= 80% of the number of the intermediate compound particles have polygonal shape including recessed faces. The target is obtained by mixing the powder of In2O3 and the power of SnO2, compacting the powdery mixture, sintering the compact in a pure oxygen current heated at 1,550 to < 1,650 DEG C, and thereafter reducing its temperature from the sintering holding temperature to at least 1,300 DEG C at a temperature reduction rate of >= 200 DEG C/hr.