Cleaning method for wafer

This invention relates to a cleaning method for wafer. It is a solvent-free cleaning method for wafer. It has dry/ wet/dry cleaning procedures. The method is applied to clean the wafer in the copper damascene process after removing the stop layer. The dry-cleaning procedure is to clean wafer by plasma, while the wet-clean procedure is to clean the wafer by D. I. water. Chemical solvent is not employed in the cleaning wafer method of this invention completely. Therefore, it may avoid the residue of chemical solvent remaining on the low-dielectric-constant (low-k) material, and further avoid destroying the electric properties of low-coefficient dielectric material. Consequently, it saves the cost of chemical solvent, and further avoids the environmental pollution.