Optical scatterometry method of sidewall spacer analysis

A method of analyzing structural characteristics of sidewall spacers fabricated on a wafer is described. A grating bar having a plurality of grating targets is provided. A theoretical optical scatterometry spectrum is generated by subjecting the grating targets to optical scatterometry. An experimen...

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Bibliographische Detailangaben
Hauptverfasser:	TAO, HUN-JAN, CHEN, FANGNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A method of analyzing structural characteristics of sidewall spacers fabricated on a wafer is described. A grating bar having a plurality of grating targets is provided. A theoretical optical scatterometry spectrum is generated by subjecting the grating targets to optical scatterometry. An experimental optical scatterometry spectrum is generated by subjecting the sidewall spacers on the wafer to optical scatterometry. The structural characteristics of the sidewall spacers are equated with the structural characteristics of the grating targets when the theoretical optical scatterometry spectrum substantially matches the experimental optical scatterometry spectrum.