Method for improving coating of photoresist

A method for improving coating of photoresist. A substrate with a trench is provided and then wetted with solvent. A first photoresist layer is formed, filling the trench. Thereafter, the first photoresist layer is baked, which in the first photoresist layer is shrunk during baking, such that the su...

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Bibliographische Detailangaben
Hauptverfasser:	CHENG, CHUNG-HSIU, WANG, CHUNIEH, GAU, JY-JIE, JANG, BOR-PING, CHENG, SU-JEN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for improving coating of photoresist. A substrate with a trench is provided and then wetted with solvent. A first photoresist layer is formed, filling the trench. Thereafter, the first photoresist layer is baked, which in the first photoresist layer is shrunk during baking, such that the surface of the baked first photoresist layer is under the surface of the substrate, followed by the ashing to improve the adhesion between the first photoresist layer and the subsequent photoresist layer. Finally, the second photoresist layer is formed over the first photoresist layer to avoid deformation of photoresist during subsequent baking process.