Lateral polysilicon pin diode and method for so fabricating

The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	WALTER, KEITH M, GREENBERG, DAVID R, SUBBANNA, SESHARDRI, JADUS, DALE K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention provides a PIN diode having a laterally extended I-region. The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.