semiconductor ceramic and resistance element using the same

A semiconductor ceramic device comprises a body composed of a semiconductor ceramic having a positive resistance-temperature coefficient primarily composed of barium titanate and electrodes provided on the body, in which the resistance-temperature coefficient is 9%/DEG C or more, resistivity is 3.5...

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Bibliographische Detailangaben
Hauptverfasser:	OKAMOTO, TETSUKAZU, NAGAO, YOSHITAKA, HIROTA, TOSHIHARU, NABIKA, YASUHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS LIME, MAGNESIA METALLURGY REFRACTORIES RESISTORS SEMICONDUCTOR DEVICES SLAG TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A semiconductor ceramic device comprises a body composed of a semiconductor ceramic having a positive resistance-temperature coefficient primarily composed of barium titanate and electrodes provided on the body, in which the resistance-temperature coefficient is 9%/DEG C or more, resistivity is 3.5 Omega.cm or less, and withstand voltage is 50 V/mm or more. As the semiconductor ceramic forming the body provided in a thermistor having positive resistance-temperature characteristics, a semiconductor ceramic having a positive resistance-temperature coefficient is used, in which the semiconductor ceramic has an average particle diameter of about 7 to 12 mum and comprises barium titanate as a major component and sodium in an amount of about 70 ppm or less on a weight basis.