Semiconductor device including trench capacitor and manufacturing method of the same

Semiconductor device including trench capacitor and manufacturing method of the same

A semiconductor device includes a semiconductor substrate, a trench including a narrowed portion and a main part, a diameter of the narrowed portion being coaxially smaller than a diameter of the trench at the main part, a first capacitor electrode provided in the semiconductor substrate so as to su...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MITA, ATSUO, TAKENAKA, KEIICHI, OIWA, NORIHISA, SAKAI, ITSUKO, NARITA, MASAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a semiconductor substrate, a trench including a narrowed portion and a main part, a diameter of the narrowed portion being coaxially smaller than a diameter of the trench at the main part, a first capacitor electrode provided in the semiconductor substrate so as to surround the trench inclusive of the narrowed portion, a capacitor insulating film provided along a surface of the first capacitor electrode, a second capacitor electrode provided inside the trench.