Semiconductor device and its manufacturing method
This invention suppresses the variation of the threshold limit of transistor operation. The semiconductor device manufacturing method includes forming a wiring layer 10, and forming a first insulating film 20 on the wiring layer 10 under a condition that the hydrogen in a plasma is 1% or less in all...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | This invention suppresses the variation of the threshold limit of transistor operation. The semiconductor device manufacturing method includes forming a wiring layer 10, and forming a first insulating film 20 on the wiring layer 10 under a condition that the hydrogen in a plasma is 1% or less in all gas components. |
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