Nitride epitaxial layer structure and its manufacturing method

This invention relates to a kind of nitride epitaxial layer structure and its manufacturing method, which comprises a substrate used as a base material, a first intermedium layer formed by stacking a high temperature Al(1-x-y)GaxInyN material with an adequate thickness on the substrate; a second int...

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Bibliographische Detailangaben
Hauptverfasser:	YOU, JENG-JANG, JIAN, FENG-REN, WEN, TZ-JI, TU, RUIN, WU, LIANG-WEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	This invention relates to a kind of nitride epitaxial layer structure and its manufacturing method, which comprises a substrate used as a base material, a first intermedium layer formed by stacking a high temperature Al(1-x-y)GaxInyN material with an adequate thickness on the substrate; a second intermedium layer formed by stacking a recrystallized Al(1-x-y)GaxInyN material with an adequate thickness on the first intermedium layer; and a nitride epitaxial layer by stacking a nitride epitaxial material on the second intermedium layer. Therefore, the issue of very high defect density of low temperature Al(1-x-y)GaxInyN can be improved and device characteristics can be enhanced.