Visible light-induced strong oxidation strong reduction photo catalyst

A visible light-induced strong oxidation strong reduction photo catalyst comprises: a first semiconductor having a band gap between the valence band and the conduction band thereof of 2.0 eV to 3.0 eV, and having a negative value for the conduction band thereof relative to H2/H2O and a difference be...

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Hauptverfasser: WANG, CHIH-KUANG, LIAW, JIUNN-WOEI, HSU, FU-YIN, CHUEH, SHANANG
Format: Patent
Sprache:eng
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Zusammenfassung:A visible light-induced strong oxidation strong reduction photo catalyst comprises: a first semiconductor having a band gap between the valence band and the conduction band thereof of 2.0 eV to 3.0 eV, and having a negative value for the conduction band thereof relative to H2/H2O and a difference between the conduction band thereof and H2/H2O of no less than 0.2 eV; and a second semiconductor compounded with the first semiconductor and having a band gap between the valence band and the conduction band thereof of 2.0 eV to 3.0 eV and a positive value for the valence band thereof relative to H2/H2O and a difference between the valence band thereof and H2/H2O of no less than 2.8 eV, thereby forming a highly active composite visible-light photo catalyst.