Method and device for the temperature control of surface temperatures of substrates in a CVD reactor

The present invention relates to a method for the temperature control of the surface temperatures of substrates which are located in a process chamber of a CVD reactor on substrate holders carried on dynamic gas cushions by a substrate holder carrier. In order to reduce or even out the temperature d...

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Bibliographische Detailangaben
1. Verfasser:	KAPPELER, JOHANNES
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention relates to a method for the temperature control of the surface temperatures of substrates which are located in a process chamber of a CVD reactor on substrate holders carried on dynamic gas cushions by a substrate holder carrier. In order to reduce or even out the temperature deviation, mean values are formed from the surface temperatures (T1-T5) which are measured in particular optically, and the heights of the gas cushions (8) are adjusted in such a way, through variation of the individually controlled gas streams which generate the gas cushions (8), that the deviations of the measured surface temperatures (T1-T5) from the mean value lie within a predetermined temperature window (TU, TL).