Process and device for the abrasive machining of surfaces, in particular semiconductor wafers

The invention relates to a process for the abrasive machining of surfaces (11, 12) on semiconductor wafers (10), in particular during the production of electronic memory elements. In this process, in a process step (A) which takes place at an early stage, a topography of the surfaces (11, 12) which are to be machined on a plurality of wafers (10) is planarized by an at least partially mechanical route. In a process step (C) which takes place at a later stage, further material is removed from the planarization surfaces (14) by the action of a liquid, chemical composition (28) (etchback). After the planarization step (A) and before the etchback step (C), layer thickness measurement (B) of the planarized layer is carried out for each individual wafer (10). The invention is distinguished by the fact that the measurement results of the layer thickness measurement (B) are used as the basis for the automatic selection or formulation of one of a plurality of chemical compositions and/or the time of action of a selected or formulated chemical composition (28) for carrying out the etchback step (C). The invention also relates to a device for carrying out the process according to the invention.