Magnetic memory

The present invention relates to a magnetic memory, which provides a magnetoresistance effect element (C) having a magnetic recording layer; and a first wiring (BL, WL) extending in a first direction on or below the magnetoresistance effect element; by passing a current through the first wiring to g...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	AMANO, MINORU, UEDA, TOMOMASA+, SAITO, YOSHIAKI, TAKAHASHI, SHIGEKI, NISHIYAMA, KATSUYA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	The present invention relates to a magnetic memory, which provides a magnetoresistance effect element (C) having a magnetic recording layer; and a first wiring (BL, WL) extending in a first direction on or below the magnetoresistance effect element; by passing a current through the first wiring to generate a magnetic field for recording information in the magnetic recording layer, a covering layer (SM) is provided on at least one of both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having an uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily.