Light emitting diode and method for manufacturing thereof

The present invention is related to a kind of light emitting diode and method for manufacturing thereof. The invention includes the following steps: providing a semiconductor substrate; epitaxially growing the first confining layer on the substrate; epitaxially growing an active layer on the first confining layer; epitaxially growing the second confining layer on the active layer; bonding a transparent window layer on the second confining layer in the way of wafer bonding; removing the substrate through the chemical etching process after performing the bonding step of window layer; growing a passive layer on the side of LED wafer where the substrate is removed; forming one metallic electric pad on the transparent window layer to cover one part of the transparent window layer; and forming another metallic electric pad on the passive layer to cover one part of the passive layer.