Method of etching conductive layers for capacitor and semiconductor device fabrication

A method of etching a multi-layer film, wherein the multi-layer film comprises at least one conductive layer and a ferroelectric layer formed sequentially on a substrate comprises forming a hard mask on at least one of the at least one conductive layers. The hard mask is used to etch the first conductive layer and the ferroelectric layer at a temperature that may exceed 100 degrees. A semiconductor device comprises first electrodes formed on a substrate, ferroelectric portions formed on the first electrodes, second electrodes formed on the ferroelectric portions, and hard masks formed on the second electrode.