Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof

A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each ot...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: FUKUYAMA, KEIICHI, TANAKA, KOHEI, IWAI, MICHINORI, MAEKAWA, MASASHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.