Method and device for the production of process gases
This invention relates to a production of process gas, which can produce hydrogen containing gas made from water vapor and hydrogen with simple procedure and low cost, in which the mixing ratio of water vapor and hydrogen can be controlled accurately and the rework process can be performed. This inv...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | This invention relates to a production of process gas, which can produce hydrogen containing gas made from water vapor and hydrogen with simple procedure and low cost, in which the mixing ratio of water vapor and hydrogen can be controlled accurately and the rework process can be performed. This invention provides a method and a device for producing process gas, which is used for treating a substrate, especially a semiconductor substrate, in which oxygen is burned in a combustion chamber under a hydrogen-rich environment to form the process gas made from water vapor and hydrogen. |
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