High quality oxide for use in integrated circuits

An oxide for use in integrated circuits is substantially stress-free both in the bulk and at the interface between the substrate and the oxide. The interface is planar and has a low interface trap density (Nit). The oxide has a low defect density and may have a thickness of less than 1.5 nm or less.

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Bibliographische Detailangaben
Hauptverfasser:	CHETLUR, SUNDAR SRINIVASAN, MERCHANT, SAILESH MANSINH, CHEN, YUANNING, ROY, PRADIP KUMAR
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	An oxide for use in integrated circuits is substantially stress-free both in the bulk and at the interface between the substrate and the oxide. The interface is planar and has a low interface trap density (Nit). The oxide has a low defect density and may have a thickness of less than 1.5 nm or less.