Under-bump-metallurgy layer

Under-bump-metallurgy layer

An under-bump-metallurgy layer (UBM layer) is suited for forming between a pad of a chip (die) and a solder bump, wherein the composition of the solder bump comprises tin. The UBM layer has an adhesion layer deposed on the pad, a Ni-V layer deposed on the adhesion layer, a wettable layer on the Ni-V...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAO, SU, CHEN, WILLIAM TZE-YOU, LEE, CHUNI, WU, JENG-DA+, TONG, HO-MING
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An under-bump-metallurgy layer (UBM layer) is suited for forming between a pad of a chip (die) and a solder bump, wherein the composition of the solder bump comprises tin. The UBM layer has an adhesion layer deposed on the pad, a Ni-V layer deposed on the adhesion layer, a wettable layer on the Ni-V layer, and a barrier layer deposed on the wettable layer. The barrier layer prevents nickel of the Ni-V layer passing through itself, and reacts with both tin of the solder bump and the wettable layer to form inter-metallic compound (IMC). Besides, another UBM layer has an adhesion layer deposed on the pad, a wettable layer deposed on the adhesion layer, and a Ni-V layer on the wettable layer. The Ni-V layer reacts with both tin of the solder bump and the wettable layer to form IMC.