I/O partitioning system and methodology to reduce band-to-band tunneling current during erase

I/O partitioning system and methodology to reduce band-to-band tunneling current during erase

A system (10a) is provided for reducing band-to-band tunneling current during flash memory erase operations. The system (10a) includes an I/O memory sector (20) divided into (N) subsectors, N being an integer, and a drain pump (40) to generate power for associated erase operations within the N subse...

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Bibliographische Detailangaben
Hauptverfasser: LEE, WENG FOOK, PAN, FENG, KURIHARA, KAZUHIRO, SUNKAVALLI, RAVI, BAUTISTA, JR. EDWARD V
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:A system (10a) is provided for reducing band-to-band tunneling current during flash memory erase operations. The system (10a) includes an I/O memory sector (20) divided into (N) subsectors, N being an integer, and a drain pump (40) to generate power for associated erase operations within the N subsectors. An erase sequencing subsystem (60) generates N pulses to enable the erase operations within each of the N subsectors in order to reduce band-to-band tunneling current provided by the drain pump (40).